mip70kmya中文资料

第1篇：mip70kmya中文资料

BAV70LT1中文资料

LESHAN RADIO COMPANY, LTD.

Monolithic Dual Switching Diode Common Cathode共阴极单片双开关二极管

3

BAV70LT1

3

1 ANODE

阳极

CATHODE

阴极

ANODE

阳极

CASE 318-08, STYLE9 SOT-23(TO-236AB)

DEVICE MARKING器件标识

BAV70LT1 = A4

MAXIMUM RATINGS (EACH DIODE) 最大额定值

Rating

Reverse Voltage反向电压 Forward Current正向电流

Peak Forward Surge Current正向浪涌电流峰值

Symbol V R I F I FM(surge)

Value 70 200 500

Unit Vdc mAdc mAdc

THERMAL CHARACTERISTICS热特性

Characteristic

Symbol

Max 225 1.8 556 300 2.4 417 -55 to +150

Unit mW mW/°C °C/W mW mW/°C °C/W °C

Total Device Dissipation FR- 5 Board (1) P D

T A = 25°C

Derate above 25°CFR – 5板的器件总功耗 Thermal Resistance, Junction to Ambient R θJA Total Device Dissipation P D Alumina Substrate, (2) T A = 25°C Derate above 25°C氧化铝基板的器件总功耗

R θJA Thermal Resistance, Junction to Ambient热阻，结到环境

T J , T stg Junction and Storage Temperature结温和存储温度

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE) 电气特性

Characteristic

Symbol

Min

Max

Unit

70

—

Vdc µAdc

—

———

60 2.5 100 1.5

pF mVdc

—————

715 855 1000 1250 6.0

ns

OFF CHARACTERISTICS开关特性

Reverse Breakdown Voltage反向击穿电压

V (BR)

(I (BR) = 100 µAdc)

Reverse Voltage Leakage Current反向漏电流电压 I R (V R = 25 Vdc, T J = 150°C) (V R = 70 Vdc)

(V R = 70 Vdc, T J = 150°C)

Diode Capacitance二极管电容

C D

(V R = 0, f = 1.0 MHz)

Forward Voltage正向电压 V F (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc)

Reverse Recovery Time反向恢复时间 R L = 100 Ω

t rr

(I F = I R = 10 mAdc, V R = 5.0 Vdc, I R(REC) = 1.0 mAdc) (Figure 1)

1. FR-5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

G5-1/1